Toshiba America Electronic Components Inc. (TAEC) has unveiled a new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. The new device is a 256-gigabit (Gb) (32 gigabyte) 48-layer BiCS FLASH device and also deploys 3-bit-per-cell TLC (triple-level cell) technology.
BiCS FLASH is based on a 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND flash memory, while enhancing write/erase reliability endurance and boosting write speeds. The new 256Gb device offers a scalable, high-density storage solution for a range of applications, including consumer SSDs, smartphones, tablets, memory cards, and enterprise SSDs for data centers.
Sample shipments of the new BiCS FLASH will start in September. For additional product information, visit http://www.toshiba.com/taec/index.html.